Title:
STORAGE DEVICE AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/105811
Kind Code:
A1
Abstract:
The present invention provides, in NAND-type flash memory having a three-dimensional structure in which a large number of memory cell layers are stacked, a storage device with few wires. OS transistors are used to constitute a decoder. Since the OS transistors can be formed using a method such as a thin film method, the decoder can be provided by stacking the decoder on the NAND-type flash memory having a three-dimensional structure. This makes it possible to reduce the number of wires that are provided substantially vertically to the memory cell layers.
Inventors:
KUNITAKE HITOSHI (JP)
OHSHITA SATORU (JP)
TSUDA KAZUKI (JP)
ONUKI TATSUYA (JP)
OHSHITA SATORU (JP)
TSUDA KAZUKI (JP)
ONUKI TATSUYA (JP)
Application Number:
PCT/IB2020/060677
Publication Date:
June 03, 2021
Filing Date:
November 13, 2020
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H01L27/11526; H01L21/336; H01L27/11548; H01L27/11556; H01L27/11573; H01L27/11575; H01L27/11582; H01L29/786; H01L29/788; H01L29/792
Foreign References:
| JP2017059607A | 2017-03-23 | |||
| JP2015056642A | 2015-03-23 | |||
| JP2012146861A | 2012-08-02 | |||
| JP2011187794A | 2011-09-22 |
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