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Title:
STORAGE DEVICE AND PREPARATION METHOD, READ-WRITE METHOD, STORAGE CHIP, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/143534
Kind Code:
A1
Abstract:
Embodiments of the present application relate to the technical field of storage, and provide a storage device and a preparation method, a read-write method, a storage chip, and an electronic device, for use in solving the problem that the number of storage states of a spin orbit torque-magnetic random access memory is increased but the storage state change interval is unchanged. The storage device comprises: a first magnetic tunneling junction, a spin orbit coupling layer, and a second magnetic tunneling junction stacked in sequence. The first magnetic tunneling junction comprises a first free layer, and the second magnetic tunneling junction comprises a second free layer. The first free layer and the second free layer are disposed on two opposite surfaces of the spin orbit coupling layer.

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Inventors:
HE LIANG (CN)
YAN XIN (CN)
ZHAO YAFEI (CN)
NING JIAI (CN)
ZHAO JUNFENG (CN)
TANG WENTAO (CN)
Application Number:
PCT/CN2021/141685
Publication Date:
July 07, 2022
Filing Date:
December 27, 2021
Export Citation:
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Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L43/08; G11C11/16; H01L43/12
Foreign References:
US20190259810A12019-08-22
CN109923686A2019-06-21
CN108538328A2018-09-14
CN202011631814A2020-12-31
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