Title:
STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/003045
Kind Code:
A1
Abstract:
Provided is a storage device with a fast operating speed. This storage device is provided with a first and a second memory cell, a first and a second bit line, a first and a second switch, and a sense amplifier. The sense amplifier is provided with a first node and a second node. The first memory cell is electrically connected to the first node via the first bit line and the first switch, and the second memory cell is electrically connected to the second node via the second bit line and the second switch. The sense amplifier amplifies the potential difference between the first node and the second node. The first memory cell and the second memory cell are each provided with a transistor which includes an oxide semiconductor in the channel formation region.
Inventors:
ONUKI TATSUYA (JP)
NAGATSUKA SHUHEI (JP)
NAGATSUKA SHUHEI (JP)
Application Number:
PCT/IB2018/054482
Publication Date:
January 03, 2019
Filing Date:
June 19, 2018
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
G11C5/02; G11C11/4091; G11C7/06; H01L21/8234; H01L21/8242; H01L27/06; H01L27/108; H01L29/786
Foreign References:
| JP2011248971A | 2011-12-08 | |||
| JP2017034243A | 2017-02-09 | |||
| JP2010061734A | 2010-03-18 |
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