Title:
STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/161755
Kind Code:
A1
Abstract:
Provided is a storage device that includes a novel semiconductor device. The storage device comprises: a memory cell that includes a transistor and a capacitive element; and a conductor. The transistor includes one of a source electrode and a drain electrode, the other of the source electrode and the drain electrode, a first gate insulator, and a first gate electrode. The capacitive element includes one electrode, a dielectric disposed on the one electrode, and another electrode disposed on the dielectric. The upper surface and side surface of one of the source electrode and the drain electrode of the transistor are in contact with the conductor. The upper surface of the other of the source electrode and the drain electrode of the transistor is in contact with the one electrode of the capacitive element. The dielectric comprises a ferroelectric material.
Inventors:
KUNITAKE HITOSHI (JP)
ISAKA FUMITO (JP)
ONUKI TATSUYA (JP)
YAMAZAKI SHUNPEI (JP)
ISAKA FUMITO (JP)
ONUKI TATSUYA (JP)
YAMAZAKI SHUNPEI (JP)
Application Number:
PCT/IB2023/051189
Publication Date:
August 31, 2023
Filing Date:
February 10, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H10B53/30; G11C11/22; H01L29/786; H10B12/00; H10B41/70; H10B53/20
Domestic Patent References:
| WO2020229919A1 | 2020-11-19 |
Foreign References:
| US20210375891A1 | 2021-12-02 | |||
| JP2018019074A | 2018-02-01 |
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