STRUCTURE HAVING OXIDE LAYER, PRODUCTION METHOD FORTHE STRUCTURE, AND CAPACITOR AND FILTER USING THE STRUCTURE

WIPO Patent Application WO/2002/062569

A1

A structure which can be applied to dielectric materials, and various electronic devices using the materials, especially capacitors and filters using the materials, and which has a substrate and an oxide layer; and a production method for the structure. A large-area oxide layer or dielectric layer which can be produced at low costs, the dielectric layer thus obtained having such a performance that an oxide coating thereof is comparable to that prepared by a single crystal; a production method thereof; and a structure having an oxide layer or a dielectric layer that is high in adhesion to a substrate and free from cracks otherwise caused by a thermal shock test. A structure comprising a substrate and an oxide layer formed on the substrate, wherein the oxide layer has first metal oxide, the oxide has crystallinity, and the substrate and the oxide layer have adhesion to each other that survives a thermal shock test of repeating 1000 times a heat history of maintaining them at 10 °C for one hour and then at +80° C for one hour.

JP2024052382	capacitor
JP7122617	Dielectrics, capacitors, electrical circuits, circuit boards, and equipment

RENGAKUJI SEICHI (JP)

PCT/JP2002/000708

August 15, 2002

January 30, 2002

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CT FOR ADVANCED SCIENCE & TECH (JP)
RENGAKUJI SEICHI (JP)

H01G4/10; (IPC1-7): B32B9/00; H01G4/10; H01P1/203

US5939194A	1999-08-17
JPH11283864A	1999-10-15
JPH11204364A	1999-07-30
JPH0737754A	1995-02-07
JPH09268059A	1997-10-14
EP1013624A2	2000-06-28

Inami, Minoru (INABA & INAMI Hanabishi Imas Hirakawacho Building 4th Floor 3-11 Hirakawacho 2-chome Chiyoda-ku, Tokyo, JP)

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