Title:
STRUCTURE INTEGRATING FIELD-EFFECT TRANSISTOR WITH HETEROJUNCTION BIPOLAR TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2018/072075
Kind Code:
A1
Abstract:
A structure integrating a field-effect transistor with a heterojunction bipolar transistor comprises: a substrate (100); a first epitaxial structure (110) located above the substrate (100), the first epitaxial structure (110) comprising a portion of a heterojunction bipolar transistor (HBT); and a second epitaxial structure (120) located above the first epitaxial structure (110), the second epitaxial structure (120) comprising a portion of a field-effect transistor (FET).
Inventors:
WU CHAN SHIN (CN)
Application Number:
PCT/CN2016/102344
Publication Date:
April 26, 2018
Filing Date:
October 18, 2016
Export Citation:
Assignee:
WU CHAN SHIN (CN)
International Classes:
H01L21/8248; H01L27/095; H01L29/06
Foreign References:
| JP2006228784A | 2006-08-31 | |||
| CN102412265A | 2012-04-11 | |||
| CN102543787A | 2012-07-04 | |||
| JP2009081284A | 2009-04-16 |
Attorney, Agent or Firm:
WATSON & BAND INTELLECTUAL PROPERTY AGENT LTD. (CN)
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