Title:
STRUCTURE MANUFACTURING METHOD AND INTERMEDIATE STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2020/217768
Kind Code:
A1
Abstract:
This structure manufacturing method includes: a step for preparing a to-be-treated object provided with an etching target object having a to-be-etched surface made from an electrically conductive group III nitride and having a to-be-etched region disposed on the to-be-etched surface, an electrically conductive member disposed in contact with at least a part of the surface of an electrically conductive region which is electrically connected to the to-be-etched region of the etching target object, and a mask formed on the to-be-etched surface and made from a non-electrically conductive material; and a step for, in a state where the to-be-treated object is dipped in an alkali or acid etching liquid containing peroxodisulfate ions as an oxidizing agent for receiving electrons and where the to-be-etched region and the electrically conductive member are in contact with the etching liquid, performing etching of the group III nitride constituting the to-be-etched region by irradiating the to-be-etched surface with light via the etching liquid. An edge which demarcates the to-be-etched region does not include the edge of the electrically conductive member, and is constituted from the edge of the mask.
Inventors:
HORIKIRI FUMIMASA (JP)
FUKUHARA NOBORU (JP)
FUKUHARA NOBORU (JP)
Application Number:
PCT/JP2020/011151
Publication Date:
October 29, 2020
Filing Date:
March 13, 2020
Export Citation:
Assignee:
SCIOCS CO LTD (JP)
SUMITOMO CHEMICAL CO (JP)
SUMITOMO CHEMICAL CO (JP)
International Classes:
H01L21/306; H01L21/308; H01L21/338; H01L21/764; H01L29/778; H01L29/812
Foreign References:
| JP2015532009A | 2015-11-05 | |||
| JP2010212718A | 2010-09-24 | |||
| JP2007519230A | 2007-07-12 | |||
| JP2011035214A | 2011-02-17 | |||
| JP2011520296A | 2011-07-14 |
Attorney, Agent or Firm:
FUKUOKA Masahiro et al. (JP)
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