KIM SEUNG-HAN (KR)
KIM DO-GON (KR)
KIM BEOM-JAE (KR)
HWANG CHANG-HUN (KR)
KIM SEUNG-HAN (KR)
KIM DO-GON (KR)
KIM BEOM-JAE (KR)
| KR20040002956A | 2004-01-07 | |||
| JP2004050821A | 2004-02-19 | |||
| JP2002367780A | 2002-12-20 |
| 1. | Substrate encap process which has the following distinctive features; the first process that the thin film sitting on the top of robot arm is located at designated distance (Dl) apart from the heating plate; the second process that the thin film sitting on the top of robot arm is taken up by holders which are assembled at two insides of chamber and are able to horizontal shift, and the robot arm is moved out from the chamber; the third process that the heating plate is shifted up until infinitesimal distance (D2) from the thin film and the chamber is turned to vacuum state by extraction of air by pump; the fourth process that one of the grip in holder is released and shifted hor¬ izontally toward the direction to chamber, then the other grip in other holder is shifted horizontally toward the corresponding direction to chamber. |
| 2. | The device as set forth in claim 1, substrate encap process demonstrating a distinctive feature that designated distance (Dl) is kept 50 to 90 mm between the thin film and the substrate on the heating plate. |
| 3. | The device as set forth in claim2, substrate encap process demonstrating a distinctive feature that infinitesimal distance (D2) between the thin film and the substrate in the third process is kept 1 to 11 mm by vertical shift of the heating plate. |
| 4. | The first process that the thin film sitting on the top of robot arm is located at designated distance (Dl) apart from the heating plate; the second process that the thin film sitting on the top of robot arm is taken up by holders which are assembled at two sides of chamber and are able to horizontal shift, and the robot arm is moved out from the chamber; the third process that the heating plate is shifted up until infinitesimal distance (D2) distance from the thin film and the chamber is turned to vacuum state by extraction of air by pump; the fourth process that the holder parts (40) are released simultaneously and shifted horizontally to the corresponding direction to the chamber, respectively. |
| 5. | The device as set forth in claim 4, substrate encap process demonstrating a distinctive feature that the designated distance (Dl) is kept 50 to 90 mm between the thin film and the substrate on the heating plate. |
| 6. | The device as set forth in claim 5, substrate encap process demonstrating a distinctive feature that the infinitesimal distance (D2) between the thin film and the substrate in the third process is kept 1 to 11 mm by vertical shift of the heating plate. |
SUBSTRATE ENCAP PROCESS
Technical Field
[1] The present invention relates to encap process of the thin film on the substrate, and more particularly to solve the problems in the previous encap process and improve the process.
[2]
Background Art
[3] As tremendous development in the field of informational technology and growth its market, the flat panel display is being highlighted as a display diode. Liquid crystal display, plasma display panel and organic light emitting diodes are represented as the examples of flat panel display. Organic light emitting diodes are outstanding among these examples in terms of low energy consumption, less weight, extreme slim manufacture by unnecessity of back light, and high brightness. The organic light emitting diodes, manufactured by coating cathode film, organic thin film and anode film on the substrate, generate self emission by the principle that potential is loaded between cathode and anode, proper energy difference is induced on the organic thin film. After re-binding of the injected electron and hole, the extra energy is turned to light. Because the wavelength of light can be controlled depending on the amount of dopants, it is possible to demonstrate full color. Due to improvement of productivity and preference of large size of display, the glass plate used in the process of display manufacture is also getting large.
[4] Detailed structure of organic light emitting diodes is formed by accumulation of the folio wings on the substrate in order of anode, hole injection layer, hole transfer layer, emitting layer, electron transfer layer, electron injection layer, and cathode. ITO (Indium Tin Oxide) is mainly employed as a cathode because its advantage of surface resistance and high transmission. For high emission efficiency, the organic thin film is composed of multi layers such as hole injection layer, hole transfer layer, emitting layer, electron transfer layer and electron injection layer, and the organic components of emitting layer are AIq , TPD, PBD, m-MTDATA and TCTA. In addition, LiF-Al metal film is employed as an anode component. Because the organic thin film is very sensitive to moisture and oxygen in the air, the thin film is coated on the top to protect from unfavorable outside conditions and to prolong lifetime.
[5]
Disclosure of Invention Technical Problem
[6] As described, the previous thin film formation method on the EL glass substrate has been performed as following procedure in the vacuum UV (Ultra violet) chamber; substrate sitting process on the heating plate, heat pressing process, UV adhesive spreading process and thin film encap process. When this encap method is employed, the instruments used for the processes of pressing and UV adhesive spreading are required and it causes complicated manufacturing process and high substrate cost.
[7]
Technical Solution
[8] To solve the drawbacks as described, the present invention provides the new substrate encap process having the special feature that the thin film adheres on the substrate from the center toward the left and the right directions gradually.
[9]
Brief Description of the Drawings
[10] FIG 1 is a brief cross-sectional view of the first process showing an example of the present invention.
[11] FIG 2 is a brief cross-sectional view of the second process showing an example of the present invention.
[12] FIG 3 is a brief cross-sectional view of the third process showing an example of the present invention.
[13] FIGS 4a - 4c are brief cross-sectional views of the fourth process respectively showing another example of the present invention.
[14] FIG 5 is a plain view of the thin film encap process on the substrate showing an example of the present invention.
[15] FIGS 6a and 6b are brief cross-sectional views of the fourth process showing examples of the present invention.
[16] FIG 7 is a plain view of the thin film encap process on the substrate showing an example of the present invention.
[17]
Mode for the Invention
[18] According to the present invention to accomplish the purpose described above, it demonstrates the substrate encap process which has the following distinctive features; the first process that the thin film, sitting on the top of robot arm, is positioned designated distance (Dl) apart from the heating plate, the second process that the thin film, sitting on the top of robot arm, is taken up by the holders which are assembled at two sides of chamber and are able to horizontal shift, and the robot arm is moved out from the chamber, the third process that the heating plate is shifted up until in¬ finitesimal distance (D2) from the thin film and the chamber is turned to vacuum state
by extraction of air by pump, the fourth process that one of the grip in holder is released and shifted horizontally toward the direction to chamber, then the other grip in other holder is shifted horizontally toward opposite direction to chamber.
[19] Here, in the first process, the designated distance (Dl) is recommended to keep 50 to 90 mm between the thin film and the substrate on the heating plate.
[20] The infinitesimal distance (D2) between the thin film and the substrate in the third process is subjected to keep 1 to 11 mm by vertical shift of the heating plate.
[21] In addition, according to one example of the present invention to accomplish the purpose described above, the first process that the thin film, sitting on the top of robot arm, is positioned designated distance (Dl) apart from the heating plate, the second process that the thin film, sitting on the top of robot arm, is taken up by the holders which are assembled two sides of chamber and are able to horizontal shift, and the robot arm is moved out from the chamber, the third process that the heating plate is shifted up until infinitesimal distance (D2) from the thin film and the chamber is turned to vacuum state by extraction of air by pump, the fourth process that one of the grip in holder is released and shifted horizontally toward the direction to chamber, then the other grip in other holder is shifted horizontally toward opposite direction to chamber.
[22] Here, in the first process, the designated distance (Dl) is recommended to keep 50 to 90 mm between the thin film and the substrate on the heating plate.
[23] In addition, the infinitesimal distance (D2) between the thin film and the substrate in the third process is subjected to keep 1 to 11 mm by vertical shift of the heating plate.
[24] Definite examples of composition and operation described in the present invention are explained into detailed with referring the supplementary figures.
[25] Fig 1 shows the cross-sectional view of the first process that operates in the inside of chamber. As described in the figure, to encap the thin film (20) on the substrate (10), the thin film (20) sitting on the robot arm (30) is shifted to the inside of chamber (not described). During operation, the definite distance (Dl) is recommended to keep 50 to 90 mm between the substrate and the thin film. At this time, the holder part (40), positioned at two sides of chamber (not described), which composed of grip (40b) and grip support (40a) that is able to horizontal shift is being ready to the second process.
[26] Fig 2 shows the cross-sectional view of the second process that represents an example of the present invention. In the second process, the thin film (20) sitting on the top of robot arm (30) is shifted to outside of chamber (not described) by the holder part (40), which assembled in two side of chamber (not described), which is able to parallel shift.
[27] Fig 3 shows the cross-sectional view of the third process of the present invention. In the third process, the heating plate (50) that the substrate (10) is deposited is moved up
until the distance from the thin film (20) reaches D2, and the inside of chamber is turned to vacuum state by extraction of air by pump (not described). The heating plate (50) is subjected to uphold by the heating plate supporter shaped a shaft, and is assembled to be able to move up and down in the chamber (not described) so that the heating plate (50) is moved up. At this time, when the heating plate is shifted, the in¬ finitesimal distance (D2) between the substrate (10) deposited on the heating plate (50) and the thin film (20) is recommended to keep 1 to 11 mm.
[28] Fig 4a-c show the cross-sectional view of the fourth process of the present invention. In the fourth process, one side of grip (40b) in the holder part (40) is released followed by parallel shift toward direction to the chamber, then the other side of grip (40b) in the holder part (40) is released subsequently and shifted toward the other direction of chamber. In the Fig 4a, when one side of holder part (40) is released, the center of thin film (20), very thin layer about 0.7 mm, goes down by gravity and contact the substrate. In this process, when one side of holder part (40) that the grip (40b) is being released is shifted parallel to the direction of chamber, then as described in Fig 4b, it adheres starting from the center to the edge of substrate (10). After finishing the process, the grip (40b) of holder part (40) on the other side is released and shifted to the corresponding direction to chamber, then as described in Fig 4c, it adheres starting from the center to the other edge of the substrate, and the thin film encap process on the substrate is completed.
[29] Fig 5 shows again a plain view of adhesion of thin film (20) on the substrate (20) in the fourth process.
[30] Fig 6a and b show cross-sectional views of other examples in the fourth process.
[31] It is the process that the grips (40b) in holder part (40) are released simultaneously and shifted horizontally to the corresponding direction to the chamber (not described) respectively, and when the individual grips (40b) in the holder part (40) are released, the thin film (20) produces sinking state toward the center of substrate (10) and eventually contacts to the substrate. As the holder part (40) shift horizontally to the corresponding direction of chamber, it is subjected to adhere toward left and right direction from the center of substrate.
[32] Through the examples of the fourth process in the present invention, Fig 7 shows a plain view of encap process of the thin film (20) on the substrate.
[33] The present invention is explained through the examples referred in the figures, but this is the only illustration. Any individuals who have a general knowledge in the present technology can do diverse modification and represent equal quality of other examples.
[34] Through the substrate encap process in the present invention, in the thin film encap process on the substrate, because the supplementary processes such as heat pressing
and UV adhesive deposition employed in the previous substrate encap process are not required, the new process creates simplification and chief manufacturing price. [35] In addition, the present invention doesn't follow the previous process that entire surface is encaped simultaneously, and the adhesive property is improved significantly over the previous encap process. [36]