SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

WIPO Patent Application WO/2005/010970

A1

A substrate processing apparatus in which the temperature of a substrate is predicted to easily control the temperature of the substrate. A reaction furnace (processing chamber)(3) has four temperature regulating zones defined by zone heaters (340-1 to 340-4) and adapted to set and regulate the temperatures. A temperature controller (4) combines the temperatures measured by inner thermocouples (302-1 to 302-4) and outer thermocouples (342-1 to 342-4) according to the time constant of the temperature of the substrate heated by the zone heaters (340-1 to 340-4) and calculates a predicted temperature of the substrate by first-order lag calculation. The temperature controller (4) calculates the electric power values (controlled variables) of the zone heaters (340-1 to 340-4) by using the substrate predicted temperature and outputs them to the zone heaters (340-1 to 340-4).

JPS5839610	[Title of the device] Temperature controller
JPS584202	[Title of the Invention] Ondho shorts Kiryu Uri Seisei Yosochi
WO/2012/038488	METHOD FOR THE CONTROLLED OPERATION OF AN INDUSTRIAL OVEN THAT IS HEATED IN A REGENERATIVE MANNER, CONTROL DEVICE, AND INDUSTRIAL OVEN

TANAKA KAZUO (JP)
UENO MASAAKI (JP)
SUGISHITA MASASHI (JP)

PCT/JP2004/008603

February 03, 2005

June 18, 2004

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HITACHI INT ELECTRIC INC (JP)
TANAKA KAZUO (JP)
UENO MASAAKI (JP)
SUGISHITA MASASHI (JP)

G05D23/22; H01L21/00; H01L21/316; (IPC1-7): H01L21/31; G05D23/19; H01L21/22

JP2002091574A	2002-03-29
JPH07283158A	1995-10-27
JP2002175123A	2002-06-21

PATENT RELATED CORPORATION IPS (Yokohama Creation Square 5-1, Sakaecho, Kanagawa-ku, Yokohama-sh, Kanagawa 52, JP)

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