Title:
SUBSTRATE-PROCESSING DEVICE, EXHAUST FLOW RATE CONTROL DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/182292
Kind Code:
A1
Abstract:
A configuration can be provided that can support an increased diameter of an exhaust line accompanying reduction in size of a device. Provided is a configuration comprising: a processing chamber in which a substrate is processed; an exhaust pipe that exhausts gas from the processing chamber; a container part provided in the exhaust pipe, the container part having opening parts on at least a gas intake side and a gas exhaust side; a flow rate control valve body configured so as to be able to seal the interior of the container from the exhaust-side opening part; a drive unit that drives the flow rate control valve body; a seal part provided on the side of the flow rate control valve body facing the exhaust-side opening part; and an exhaust flow rate control device configured so that it is possible to drive the flow rate control valve body with the drive unit and control the pressure of the processing chamber.
Inventors:
ABURATANI YUKINORI (JP)
Application Number:
PCT/JP2021/008421
Publication Date:
September 16, 2021
Filing Date:
March 04, 2021
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/31; H01L21/318
Foreign References:
| JP2007042823A | 2007-02-15 | |||
| JP2001351870A | 2001-12-21 | |||
| JP2016505711A | 2016-02-25 | |||
| JPH07198063A | 1995-08-01 | |||
| JP2011146412A | 2011-07-28 | |||
| JP2006283935A | 2006-10-19 | |||
| JP2003161382A | 2003-06-06 |
Attorney, Agent or Firm:
TAIYO, NAKAJIMA & KATO (JP)
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