Title:
SUBSTRATE PROCESSING DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR PROCESSING SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2014/157071
Kind Code:
A1
Abstract:
The size of a wafer increases with the miniaturization of a semiconductor and the diameter enlargement of the wafer. Therefore, the gas flow supplied also increases compared to the process for a conventional wafer size. Thus, it is difficult to perform exhaust pressure control in the same manner as before.
This substrate processing device includes opening and closing valves respectively provided on a plurality of exhaust pipes communicating with a process chamber and a vacuum pump, and a control means for controlling the opening and closing valves, and addresses the diameter enlargement of the wafer by opening and closing the valves and controlling the pressure for each process event.
Inventors:
TANIYAMA TOMOSHI (JP)
Application Number:
PCT/JP2014/058053
Publication Date:
October 02, 2014
Filing Date:
March 24, 2014
Export Citation:
Assignee:
HITACHI INT ELECTRIC INC (JP)
International Classes:
H01L21/31; C23C16/52; H01L21/205; H01L21/22; H01L21/324
Foreign References:
| JPH06244125A | 1994-09-02 | |||
| JPH02110331U | 1990-09-04 | |||
| JP2000100793A | 2000-04-07 | |||
| JPH1015378A | 1998-01-20 | |||
| JP2005057305A | 2005-03-03 | |||
| JP2001217194A | 2001-08-10 | |||
| JPH05166737A | 1993-07-02 |
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