Title:
SUBSTRATE PROCESSING DEVICE, SEMICONDUCTOR DEVICE PRODUCTION METHOD, AND PROGRAM
Document Type and Number:
WIPO Patent Application WO/2019/180966
Kind Code:
A1
Abstract:
A technology comprising a processing chamber (5), microwave generators (91, 92), a temperature measurement unit (16), a gas introduction unit (20), an exhaust unit (10), a storage unit, and a control unit (100) is provided. The control unit (100) controls the microwave generators and the gas introduction unit such that: microwaves generated by the microwave generators are supplied to a substrate in the processing chamber; a coolant gas is introduced at a prescribed flow rate from the gas introduction unit into the processing chamber when the internal temperature measured by the temperature measurement unit is between a lower limit threshold and an upper limit threshold, which are stored in the storage unit; the coolant gas is introduced from the gas introduction unit into the processing chamber at a higher flow rate than the prescribed flow rate when the measured internal temperature exceeds the upper limit threshold; and the coolant gas is introduced from the gas introduction unit into the processing chamber at a lower flow rate than the prescribed flow rate when the measured internal temperature does not meet the lower limit threshold.
Inventors:
HIROCHI YUKITOMO (JP)
YANAGISAWA YOSHIHIKO (JP)
YANAGISAWA YOSHIHIKO (JP)
Application Number:
PCT/JP2018/011931
Publication Date:
September 26, 2019
Filing Date:
March 23, 2018
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/324; H01L21/268
Domestic Patent References:
| WO2017022366A1 | 2017-02-09 | |||
| WO2012133441A1 | 2012-10-04 |
Foreign References:
| JP2012191158A | 2012-10-04 | |||
| JP2015103726A | 2015-06-04 |
Attorney, Agent or Firm:
NAKAJIMA, Jun et al. (JP)
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