Title:
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/181691
Kind Code:
A1
Abstract:
In the present invention, a substrate that includes a tin-containing film is appropriately etched. In one illustrative embodiment, a substrate processing method is provided. This substrate processing method comprises: a preparation step for preparing a substrate that includes a carbon-containing film, an intermediate film that is provided on the carbon-containing film, and a tin-containing film that is provided on the intermediate film and that has an aperture pattern; a first etching step for etching the intermediate film, with the tin-containing film being used as a mask, so as to transfer the aperture pattern onto the intermediate film; and a second etching step in which plasma generated from a processing gas containing hydrogen, halogen or carbon, and oxygen is used to remove the tin-containing film, and the carbon-containing film is etched with the intermediate film being used as a mask.
Inventors:
ONO KENTA (JP)
ISHIKAWA SHINYA (JP)
NISHIZUKA TETSUYA (JP)
HONDA MASANOBU (JP)
ISHIKAWA SHINYA (JP)
NISHIZUKA TETSUYA (JP)
HONDA MASANOBU (JP)
Application Number:
PCT/JP2022/007605
Publication Date:
September 01, 2022
Filing Date:
February 24, 2022
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065
Foreign References:
| US20200273705A1 | 2020-08-27 | |||
| JP2016173415A | 2016-09-29 | |||
| US20190237341A1 | 2019-08-01 |
Attorney, Agent or Firm:
SATO, Atsushi et al. (JP)
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