Title:
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/211057
Kind Code:
A1
Abstract:
Provided is a feature for controlling the dimensions and/or shape of an opening to be formed in a film to be etched. A substrate processing method according to the present disclosure comprises: a step for preparing a substrate having (a) a film to be etched, (b) a mask film formed on the film to be etched and having a side wall defining at least one opening on the film to be etched, and (c) a protective film formed on at least the side wall of the mask film so as to surround the opening, and containing at least one element selected from the group consisting of boron, phosphorus, sulfur, and tin; and a step for etching the film to be etched using the protective film and the mask film as a mask.
Inventors:
ISHIKAWA SHINYA (JP)
ONO KENTA (JP)
HONDA MASANOBU (JP)
ONO KENTA (JP)
HONDA MASANOBU (JP)
Application Number:
PCT/JP2022/016672
Publication Date:
October 06, 2022
Filing Date:
March 31, 2022
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H05H1/46; H01L21/3065
Foreign References:
| JP2012227440A | 2012-11-15 | |||
| JP2020532658A | 2020-11-12 | |||
| US20100068885A1 | 2010-03-18 |
Attorney, Agent or Firm:
SATO, Atsushi et al. (JP)
Download PDF:
Previous Patent: ELASTIC WAVE DEVICE
Next Patent: MICRONEEDLE STRUCTURE PRODUCITON METHOD AND MICRONEEDLE STRUCTURE
Next Patent: MICRONEEDLE STRUCTURE PRODUCITON METHOD AND MICRONEEDLE STRUCTURE