Title:
SUBSTRATE PROCESSING METHOD, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND PROGRAM
Document Type and Number:
WIPO Patent Application WO/2023/119726
Kind Code:
A1
Abstract:
A substrate processing method according to the present invention comprises: (a) a step for forming a first film on a substrate, the first film having at least either a C-H bond and an Si-C bond or an N-H bond and an Si-N bond; (b) a step for modifying the first film into a second film by subjecting the first film to a heat treatment at a processing temperature that is higher than the processing temperature in step (a); and (c) a step for modifying the second film into a third film by subjecting the second film to plasma processing so that the ratio of the Si-C bond to the C-H bond in the third film is higher than the ratio of the Si-C bond to the C-H bond in the first film, or alternatively, the ratio of the Si-N bond to the N-H bond in the third film is higher than the ratio of the Si-N bond to the N-H bond in the first film.
Inventors:
TERUI YUSUKE (JP)
YAMAKADO YUKI (JP)
HASHIMOTO YOSHITOMO (JP)
NAKAYAMA MASANORI (JP)
YAMAKADO YUKI (JP)
HASHIMOTO YOSHITOMO (JP)
NAKAYAMA MASANORI (JP)
Application Number:
PCT/JP2022/031498
Publication Date:
June 29, 2023
Filing Date:
August 22, 2022
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/316; C23C16/42; C23C16/56; H01L21/31
Domestic Patent References:
| WO2015045163A1 | 2015-04-02 | |||
| WO2020072203A2 | 2020-04-09 |
Foreign References:
| JP2015053445A | 2015-03-19 |
Attorney, Agent or Firm:
FUKUOKA Masahiro et al. (JP)
Download PDF: