Title:
SUBSTRATE PROCESSING METHOD, PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING DEVICE, AND PROGRAM
Document Type and Number:
WIPO Patent Application WO/2023/047918
Kind Code:
A1
Abstract:
The present invention has: a step for supplying a modification agent to a substrate that has a first surface and a second surface and thereby adsorbing inhibitor molecules that are included in the modification agent onto the first surface to form an inhibitor layer on the first surface; and a step for supplying a film formation agent that includes a catalyst to the substrate after the inhibitor layer has been formed on the first surface and thereby forming a film on the second surface. The catalyst supplied during the step for forming the film has a molecular size that makes it difficult for the catalyst to pass through the inter-molecular gaps between the inhibitor molecules that have been adsorbed onto the first surface.
Inventors:
NAKATANI KIMIHIKO (JP)
YAMAMOTO RYUJI (JP)
YAMAMOTO RYUJI (JP)
Application Number:
PCT/JP2022/033085
Publication Date:
March 30, 2023
Filing Date:
September 02, 2022
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/31; C23C16/04; H01L21/316
Foreign References:
| JP2021106242A | 2021-07-26 | |||
| JP2018046279A | 2018-03-22 | |||
| JP2022075394A | 2022-05-18 |
Attorney, Agent or Firm:
FUKUOKA Masahiro et al. (JP)
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