Title:
SUBSTRATE PROCESSING METHOD, PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE, PROGRAM, AND SUBSTRATE PROCESSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/188013
Kind Code:
A1
Abstract:
A technique for reducing the amount of foreign matter generated in an etching process and thereby inhibiting a reduction in the quality of a film, the technique comprising: a) a step for supplying a first gas to a substrate on which a film is formed, to form a modified layer on a surface of the film; b) a step for, after a), supplying a second gas to the modified layer to remove the modified layer; c) a step for, after b), supplying to the film an inert gas having a first temperature higher than a processing temperature in b); and d) a step for performing a), b), and c) sequentially for a predetermined number of times to remove a portion of the film.
Inventors:
KADOSHIMA MASARU (JP)
SANO ATSUSHI (JP)
SANO ATSUSHI (JP)
Application Number:
PCT/JP2022/015578
Publication Date:
October 05, 2023
Filing Date:
March 29, 2022
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/302
Foreign References:
| JP2020536393A | 2020-12-10 | |||
| JP2016072465A | 2016-05-09 | |||
| JP2019012759A | 2019-01-24 | |||
| JP2016058590A | 2016-04-21 |
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