Title:
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM
Document Type and Number:
WIPO Patent Application WO/2023/219026
Kind Code:
A1
Abstract:
The present invention provides a substrate processing method for processing a substrate, the method comprising: a step in which one surface of the substrate is ground so as to form a recess wherein the central part of the one surface is recessed from the outer peripheral part; a step in which the thickness distribution of the substrate is acquired by measuring the thickness of the substrate after the grinding; a step in which the optimum etching conditions for optimizing the etching amount deviation distribution during the etching of the one surface are calculated on the basis of the thickness distribution; and a step in which the one surface is etched by supplying an etching liquid from an etching liquid supply unit to the one surface of the substrate after the grinding on the basis of the optimum etching conditions.
Inventors:
SAKAGUCHI KEISUKE (JP)
HAYAKAWA SUSUMU (JP)
HAYAKAWA SUSUMU (JP)
Application Number:
PCT/JP2023/017025
Publication Date:
November 16, 2023
Filing Date:
May 01, 2023
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/306; H01L21/304
Foreign References:
| JP2017188549A | 2017-10-12 | |||
| US5821166A | 1998-10-13 | |||
| JP2014127618A | 2014-07-07 | |||
| JP2021034533A | 2021-03-01 |
Attorney, Agent or Firm:
KANEMOTO, Tetsuo et al. (JP)
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