Title:
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM
Document Type and Number:
WIPO Patent Application WO/2024/058135
Kind Code:
A1
Abstract:
Provided is a technology for reducing residue in developed patterns. Provided is a substrate processing method. This method comprises: (a) a step for providing a substrate having a base film and a metal-containing resist film formed on the base film on a substrate support part in a chamber, the metal-containing resist film having an exposed first region and an unexposed second region; and (b) a step for supplying a processing gas to the chamber to develop the substrate and selectively removing the second region from the metal-containing resist film. The (b) step includes: (b1) a step for performing development by controlling the temperature of the substrate or the substrate support part to a first temperature; and (b2) a step for performing development by controlling the temperature of the substrate or the substrate support part to a second temperature different from the first temperature.
Inventors:
KUMAKURA SHO (JP)
ONO KENTA (JP)
NAKANE YUTA (JP)
NISHIZUKA TETSUYA (JP)
HONDA MASANOBU (JP)
ONO KENTA (JP)
NAKANE YUTA (JP)
NISHIZUKA TETSUYA (JP)
HONDA MASANOBU (JP)
Application Number:
PCT/JP2023/033080
Publication Date:
March 21, 2024
Filing Date:
September 11, 2023
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
G03F7/26; H01L21/027; H01L21/3065
Foreign References:
| JP2022538040A | 2022-08-31 | |||
| JPS60113427A | 1985-06-19 | |||
| JP2003100719A | 2003-04-04 | |||
| JPH11283791A | 1999-10-15 |
Attorney, Agent or Firm:
SATO, Atsushi et al. (JP)
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