Title:
SUBSTRATE FOR SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2024/069888
Kind Code:
A1
Abstract:
This substrate for a semiconductor device comprises a ceramic substrate and a copper sheet joined to at least one surface of the ceramic substrate. The ceramic substrate has a Cu region having a Cu presence depth of 11.0 to 20.0 μm, the Cu presence depth being measured from the joining interface with the copper sheet and having a cumulative Cu mass concentration which reaches 90%.
Inventors:
TANABE SHOTA (JP)
ZENKYU YOSHIKI (JP)
ZENKYU YOSHIKI (JP)
Application Number:
PCT/JP2022/036557
Publication Date:
April 04, 2024
Filing Date:
September 29, 2022
Export Citation:
Assignee:
NGK ELECTRONICS DEVICES INC (JP)
NGK INSULATORS LTD (JP)
NGK INSULATORS LTD (JP)
International Classes:
H01L23/12
Foreign References:
| US20090152237A1 | 2009-06-18 | |||
| CN103113126A | 2013-05-22 | |||
| CN112533388A | 2021-03-19 | |||
| CN114230359A | 2022-03-25 |
Attorney, Agent or Firm:
TACHIBANA, Kenji (JP)
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