Title:
SUBSTRATE FOR STEALTH DICING FILM, FILM FOR STEALTH DICING, AND METHOD FOR MANUFACTURING ELECTRONIC COMPONENT
Document Type and Number:
WIPO Patent Application WO/2013/099778
Kind Code:
A1
Abstract:
Provided is a substrate for stealth dicing film in which the thickness is within the range of 50 µm to 200 µm inclusive, the initial stress is within the range of 9 MPa to 19 MPa inclusive, the expansion rate is within the range of 102 % to 120 % inclusive, the haze value is 10 or less, and the total light transmittance is 90 % or more.
Inventors:
NAKANO SHIGENORI (JP)
NISHIKORI MASAHIRO (JP)
HASHIMOTO YOSHIE (JP)
MIYASHITA YUSUKE (JP)
NISHIKORI MASAHIRO (JP)
HASHIMOTO YOSHIE (JP)
MIYASHITA YUSUKE (JP)
Application Number:
PCT/JP2012/083154
Publication Date:
July 04, 2013
Filing Date:
December 20, 2012
Export Citation:
Assignee:
MITSUI DU PONT POLYCHEMICAL (JP)
International Classes:
H01L21/301; C08F210/02; C08F220/06; C09J7/24; C08J5/18; C08L33/08; C08L33/10
Foreign References:
| JP2011061097A | 2011-03-24 | |||
| JP2011040449A | 2011-02-24 | |||
| JP2007053325A | 2007-03-01 | |||
| JP2006186305A | 2006-07-13 | |||
| JP2010202735A | 2010-09-16 | |||
| JP2011216508A | 2011-10-27 | |||
| JP2011210887A | 2011-10-20 | |||
| JPH098111A | 1997-01-10 | |||
| JP2003158098A | 2003-05-30 | |||
| JP2006192474A | 2006-07-27 |
Attorney, Agent or Firm:
NISHIYAMA, Takashi et al. (JP)
Nishiyama 崇 (JP)
Nishiyama 崇 (JP)
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Claims: