SUBSTRATE STRIPPING METHOD FOR SEMICONDUCTOR STRUCTURE

WIPO Patent Application WO/2022/073230

A1

Provided is a substrate stripping method for a semiconductor structure. The method comprises: providing a substrate (10), a first AlN layer (11), a first AlGaN layer (12) and a functional layer (13), which are distributed from bottom to top; and irradiating, from the substrate (10), the first AlGaN layer (12) with laser light to decompose the first AlGaN layer (12), such that the functional layer (13) is detached from the substrate (10) and the first AlN layer (11). By means of the method, the first AlN layer (11) and the first AlGaN layer (12) respectively correspond to a nucleation layer and a buffer layer when used as an epitaxial growth functional layer (13), so that the quality of the functional layer (13) can be improved. Moreover, when the substrate (10) is irradiated with laser light in certain bands, the first AlN layer (11) is transparent for the light in the bands. However, the first AlGaN layer (12) decomposes into nitrogen after absorbing the light in the bands, which causes the first AlGaN layer (12) to be loose, porous and easy to separate, so that the substrate (10) can be easily stripped without damaging the functional layer (13).

WO/2016/086506	METHOD FOR MANUFACTURING MULTICOLOR LED FOR VIDEO DISPLAY PANEL ON COMPOSITE GLASS SUBSTRATE
JP2002023698	SUBTITLE DISPLAY DEVICE

CHENG KAI (CN)

PCT/CN2020/120174

April 14, 2022

October 10, 2020

Click for automatic bibliography generation  

ENKRIS SEMICONDUCTOR INC (CN)

H01L33/00; H01L21/683; H01L33/32; H03H9/56

CN1943044A	2007-04-04
CN110459659A	2019-11-15
CN107123589A	2017-09-01
US20070139141A1	2007-06-21
CN107863426A	2018-03-30

BEIJING BESTIPR INTELLECTUAL PROPERTY LAW CORPORATION (CN)

View/Download PDF      PDF Help

Previous Patent: METHOD AND APPARATUS FOR MANAGING LOAD OF NETWORK NODE

Next Patent: METHOD AND APPARATUS FOR PUSCH TRANSMISSION WITH REPETITION