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Title:
SUBSTRATE TREATMENT METHOD, PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE, PROGRAM, AND SUBSTRATE TREATMENT DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/053140
Kind Code:
A1
Abstract:
The present invention comprises: a first step for heating a treatment container at a predetermined heat gradient without having a treatment substrate included in the treatment container; and a second step for, after the first step, treating the treatment substrate in a state of having the treatment substrate included in the treatment container.

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Inventors:
TSUBOTA YASUTOSHI (JP)
KISHIMOTO HIROKI (JP)
Application Number:
PCT/JP2023/011918
Publication Date:
March 14, 2024
Filing Date:
March 24, 2023
Export Citation:
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Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/318; C23C16/44; H01L21/31
Domestic Patent References:
WO2019053806A12019-03-21
Foreign References:
US20070281083A12007-12-06
JP2007027187A2007-02-01
JP2020150087A2020-09-17
JPH03288440A1991-12-18
JP2013141010A2013-07-18
Attorney, Agent or Firm:
FUKUOKA Masahiro et al. (JP)
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