Title:
SUBSTRATE WITH CONDUCTIVE FILM, REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND SEMICONDUCTOR DEVICE PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2024/071026
Kind Code:
A1
Abstract:
Provided is a substrate with a conductive film which can inhibit changes in flatness in a reflective mask and a reflective mask blank for EUV lithography having a conductive film. This substrate with a conductive film includes a substrate having two main surfaces, and a conductive film disposed on one of the main surfaces of the substrate, and is characterized in that: the conductive film includes an outermost layer disposed on an outermost surface on the reverse side of the conductive film from the substrate, and a conductive layer disposed between the outermost layer and the substrate; the outermost layer includes a metal (M), boron (B), and oxygen (O); and a B1s narrow spectrum of the outermost layer obtained through analysis with X-ray photoelectron spectroscopy has a maximum peak at a binding energy of 190-195 eV.
Inventors:
KISHIDA HIBIKI (JP)
NAKAGAWA MASANORI (JP)
NAKAGAWA MASANORI (JP)
Application Number:
PCT/JP2023/034697
Publication Date:
April 04, 2024
Filing Date:
September 25, 2023
Export Citation:
Assignee:
HOYA CORP (JP)
International Classes:
G03F1/24; C23C14/06
Domestic Patent References:
| WO2021161792A1 | 2021-08-19 |
Foreign References:
| JP2022069683A | 2022-05-11 | |||
| JP2021039144A | 2021-03-11 |
Attorney, Agent or Firm:
TSUKUNI & ASSOCIATES et al. (JP)
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