Title:
SUPERLATTICE FERROELECTRIC MEMRISTOR BASED ON HFO2/ZRO2 OR HFO2/AL2O3 AND PREPARATION THEREOF
Document Type and Number:
WIPO Patent Application WO/2023/070748
Kind Code:
A1
Abstract:
A superlattice ferroelectric memristor, which belongs to the technical field of microelectronic devices, and comprises a lower electrode layer, a functional layer and an upper electrode layer which are sequentially stacked from bottom to top, the functional layer being a superlattice functional layer composed of at least one superlattice unit, and each superlattice unit being formed by sequentially stacking a first functional material and a second functional material from bottom to top; the thickness of any sub-functional layer formed by the first functional material or the second functional material in the functional layer satisfies 0.6-5 nm; and the first functional material is HfO2, and the second functional material is ZrO2 or Al2O3. By improving the structure and composition of the functional layer of the device, and different from conventional metal-doped HfO2-based ferroelectric memristors, a ferroelectric memristor having a superlattice HfO2 layer and ZrO2 layer (or Al2O3 layer) stacked and grown is used as a functional layer, which has good ferroelectric and memristor characteristics,.
Inventors:
SUN HUAJUN (CN)
BAI NA (CN)
WANG WENLIN (CN)
MIAO XIANGSHUI (CN)
BAI NA (CN)
WANG WENLIN (CN)
MIAO XIANGSHUI (CN)
Application Number:
PCT/CN2021/130012
Publication Date:
May 04, 2023
Filing Date:
November 11, 2021
Export Citation:
Assignee:
UNIV HUAZHONG SCIENCE TECH (CN)
International Classes:
C30B25/00; C30B29/16; C30B29/20; C30B29/68
Foreign References:
| CN111009609A | 2020-04-14 | |||
| CN111223873A | 2020-06-02 | |||
| CN113285020A | 2021-08-20 | |||
| CN112701220A | 2021-04-23 | |||
| CN104009156A | 2014-08-27 | |||
| CN113196490A | 2021-07-30 | |||
| US20160013402A1 | 2016-01-14 |
Attorney, Agent or Firm:
HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY PATENT AGENCY CENTER (CN)
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