Title:
SURFACE-EMITTING LASER ELEMENT
Document Type and Number:
WIPO Patent Application WO/2023/058405
Kind Code:
A1
Abstract:
The present invention comprises: a first semiconductor layer that is provided on a substrate; an active layer that is provided on the first semiconductor layer; a second semiconductor layer that is provided on the active layer and is of the opposite conductivity type from the first semiconductor layer; a hole layer that is included in the first semiconductor layer and comprises holes that are arranged with a two-dimensional periodicity in a plane parallel to the active layer; and a reflection layer that is provided on the second semiconductor layer and has a reflection surface. The present invention has a light emission surface on the back surface of the substrate. The hole layer has a diffraction plane that is the symmetry center plane when light standing in the hole layer is diffracted with a symmetrical electric field amplitude toward a direction orthogonally intersecting the hole layer. A separating distance is provided between the diffraction plane and the reflection surface, such that the light intensity of the combined light of a first diffracted light which has been diffracted from the diffraction plane to the light emission surface side and a second diffracted light which has been diffracted from the diffraction plane to the reflection surface side and reflected by the reflection surface is greater than the light intensity of the first diffracted light.
Inventors:
NODA SUSUMU (JP)
INOUE TAKUYA (JP)
KOIZUMI TOMOAKI (JP)
EMOTO KEI (JP)
INOUE TAKUYA (JP)
KOIZUMI TOMOAKI (JP)
EMOTO KEI (JP)
Application Number:
PCT/JP2022/033799
Publication Date:
April 13, 2023
Filing Date:
September 08, 2022
Export Citation:
Assignee:
UNIV KYOTO (JP)
STANLEY ELECTRIC CO LTD (JP)
STANLEY ELECTRIC CO LTD (JP)
International Classes:
H01S5/11
Domestic Patent References:
| WO2021186965A1 | 2021-09-23 | |||
| WO2014175447A1 | 2014-10-30 | |||
| WO2018155710A1 | 2018-08-30 |
Foreign References:
| JP2013128150A | 2013-06-27 | |||
| JP2010283335A | 2010-12-16 | |||
| US20120170109A1 | 2012-07-05 | |||
| JP2020045573A | 2020-03-26 |
Other References:
Y. LIANG ET AL., PHYS. REV. B, vol. 84, 2011, pages 195119
Attorney, Agent or Firm:
SATO & ASSOCIATES (JP)
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