Title:
SWITCHING DEVICE HAVING BI-DIRECTIONAL DRIVE CHARACTERISTICS AND METHOD OF OPERATING SAME
Document Type and Number:
WIPO Patent Application WO/2020/153618
Kind Code:
A1
Abstract:
Disclosed is a bi-directional two-terminal phase-change memory device using a tunneling thin film and a method of operating same. According to one embodiment, a phase-change memory device comprises: a first electrode; a second electrode; and a phase-change memory cell interposed between the first electrode and the second electrode, wherein the phase-change memory cell comprises: a P-type intermediate layer used as a data storage as the crystalline state changes due to a voltage applied through the first electrode and the second electrode; an upper layer and a lower layer formed with an N-type semiconductor material to both ends of the intermediate layer; and at least one tunneling thin film disposed on at least one area from an area between the upper layer and the intermediate layer or an area between the lower layer and the intermediate layer, so as to reduce leakage current in the intermediate layer or prevent intermixing between a P-type dopant and an N-type dopant.
Inventors:
SONG YUN HEUB (KR)
Application Number:
PCT/KR2019/018757
Publication Date:
July 30, 2020
Filing Date:
December 31, 2019
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO LTD (KR)
International Classes:
H01L45/00; H01L21/02; H01L27/108
Foreign References:
| KR20140116264A | 2014-10-02 | |||
| KR101671860B1 | 2016-11-03 | |||
| KR20180068527A | 2018-06-22 | |||
| KR20180133771A | 2018-12-17 | |||
| KR100745761B1 | 2007-08-02 | |||
| KR100807230B1 | 2008-02-28 | |||
| KR20160073143A | 2016-06-24 | |||
| US20170358334A1 | 2017-12-14 |
Attorney, Agent or Firm:
Y.P.LEE, MOCK & PARTNERS (KR)
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