Title:
SWITCHING DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2023/149043
Kind Code:
A1
Abstract:
This method for manufacturing a switching device (10) includes: a step for forming a source region (30) and a body region (34) in a semiconductor substrate (12) having a drift region (38); a step for forming a mask (50) that has openings (52) and that is on the top surface of the semiconductor substrate having the drift region; a step for forming electric field relaxation regions (36) in the drift region by implanting p-type impurities into the semiconductor substrate through the openings after forming the mask; a step for forming gate trenches (14) in the openings after forming the electric field relaxation regions, the gate trenches being formed such that the electric field relaxation regions remain under the gate trenches; and a step for forming a gate insulating film (16) and a gate electrode (18) after forming the gate trenches.
Inventors:
WATANABE MASAKAZU (JP)
Application Number:
PCT/JP2022/041516
Publication Date:
August 10, 2023
Filing Date:
November 08, 2022
Export Citation:
Assignee:
DENSO CORP (JP)
International Classes:
H01L21/336; H01L29/78
Foreign References:
| JP2010232627A | 2010-10-14 | |||
| JP2018207101A | 2018-12-27 | |||
| JP2008235546A | 2008-10-02 | |||
| JP2018206923A | 2018-12-27 |
Attorney, Agent or Firm:
KAI-U PATENT LAW FIRM (JP)
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