Title:
SWITCHING ELEMENT, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2015/033476
Kind Code:
A1
Abstract:
This switching element is characterized in being provided with: a substrate; a first gate pad formed on the substrate; a second gate pad formed on the substrate; a first resistance section, which is formed on the substrate, and which connects the first gate pad and the second gate pad to each other; and a cell region, which is formed as a part of the substrate, and which is connected to the first gate pad. Consequently, after completing the switching element having the built-in gate resistor, a gate resistance value of the switching element can be measured, and a gate resistance of the switching element can be selected.
Inventors:
HASEGAWA SHIGERU (JP)
MORISHITA KAZUHIRO (JP)
KITANI TAKESHI (JP)
MORISHITA KAZUHIRO (JP)
KITANI TAKESHI (JP)
Application Number:
PCT/JP2013/074284
Publication Date:
March 12, 2015
Filing Date:
September 09, 2013
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L27/04; H01L21/822; H01L29/41; H01L29/423; H01L29/49; H01L29/78
Foreign References:
| JP2008147785A | 2008-06-26 | |||
| JPH0758293A | 1995-03-03 | |||
| JP2007273931A | 2007-10-18 |
Attorney, Agent or Firm:
TAKADA, Mamoru et al. (JP)
Takada 守 (JP)
Takada 守 (JP)
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