Title:
SYMMETRICAL TYPE MEMORY CELL AND BNN CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2022/040853
Kind Code:
A1
Abstract:
The present disclosure provides a symmetrical type memory cell and a BNN circuit. The symmetrical type memory cell comprises a first complementary structure and a second complementary structure; the second complementary structure is symmetrically connected to the first complementary structure in a first direction; the first complementary structure comprises a first control transistor used for being connected to the second complementary structure; the second complementary structure comprises a second control transistor; the drain electrode of the second control transistor and the drain electrode of the first control transistor are symmetrically arranged in the first direction, and are simultaneously connected to a bit line; and the symmetrical type memory cell is used for storing the weight value 1 or 0. By means of the symmetrical type memory cell of the present disclosure, the breakpoint data of the BNN circuit can be kept, power consumption is reduced, the area of a memory is greatly reduced, time delay is reduced, and the BNN circuit can realize a large-scale parallel reasoning operation.
Inventors:
LUO QING (CN)
CHEN BING (CN)
LV HANGBING (CN)
LIU MING (CN)
LU CHENG (CN)
CHEN BING (CN)
LV HANGBING (CN)
LIU MING (CN)
LU CHENG (CN)
Application Number:
PCT/CN2020/110781
Publication Date:
March 03, 2022
Filing Date:
August 24, 2020
Export Citation:
Assignee:
INST OF MICROELECTRONICS CAS (CN)
International Classes:
G11C11/22; G06N3/063; G11C5/06; G11C11/4063
Foreign References:
| CN111081298A | 2020-04-28 | |||
| US20130064003A1 | 2013-03-14 | |||
| CN111354400A | 2020-06-30 |
Attorney, Agent or Firm:
CHINA SCIENCE PATENT & TRADEMARK AGENT LTD. (CN)
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