SYSTEM FOR PRODUCING POLYCRYSTALLINE SILICON, APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON, AND PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON

WIPO Patent Application WO/2011/030495

A1

A technique is provided with which heat is effectively recovered from a cooling medium that was used for cooling a reactor, and inclusion of dopant impurities from the inner wall of the reactor during deposition of polycrystalline silicon within the reactor is reduced to enable high-purity polycrystalline silicon to be produced. Hot water (15) having a temperature higher than the normal boiling point is used as a cooling medium to be supplied to a reactor (10), and the temperature of the inner wall of the reactor is kept at 370ºC or lower. With a pressure control part disposed for a cooling-medium tank (20), the pressure of the hot water (15) to be recovered is reduced to generate steam. Some of the water is taken out as steam and is reutilized as a heat source for another use. The inner wall of the reactor (10) includes a corrosion-resistant layer (11a) disposed on the side facing the inside of the furnace, and the material of the layer (11a) is an alloy material having a composition in which the value of R defined by R=[Cr]+[Ni]-1.5[Si] is 40% or higher.

NETSU SHIGEYOSHI (JP)
OGURO KYOJI (JP)
SHIMIZU TAKAAKI (JP)
KUROSAWA YASUSHI (JP)
KUME FUMITAKA (JP)

PCT/JP2010/004647

March 17, 2011

July 20, 2010

Click for automatic bibliography generation  

SHINETSU CHEMICAL CO (JP)
NETSU SHIGEYOSHI (JP)
OGURO KYOJI (JP)
SHIMIZU TAKAAKI (JP)
KUROSAWA YASUSHI (JP)
KUME FUMITAKA (JP)

C01B33/02

JP2002299259A	2002-10-11
US4724160A	1988-02-09
JPS6355112A	1988-03-09
JPH08259211A	1996-10-08
US4724160A	1988-02-09
JPH08259211A	1996-10-08

See also references of EP 2479141A4

OHNO, Seiji et al. (JP)
Seiji Ono (JP)

View/Download PDF      PDF Help

Previous Patent: COAXIAL PROBE PIN, COAXIAL CABLE, AND METHOD FOR MANUFACTURING THE COAXIAL PROBE PIN

Next Patent: INK JET PRINTING METHOD AND DEVICE