Title:
TECHNIQUES FOR FORMING LOW STRESS MASK USING IMPLANTATION
Document Type and Number:
WIPO Patent Application WO/2019/204006
Kind Code:
A3
Abstract:
A method may include depositing a mask layer on a substrate using physical vapor deposition, wherein an absolute value of a stress in the mask layer has a first value; and directing a dose of ions into the mask layer, wherein the absolute value of the stress in the mask layer has a second value, less than the first value, after the directing the dose.
Inventors:
PRASAD RAJESH (US)
LIU TZU-YU (US)
AREVALO EDWIN (US)
MITTAL DEVEN (US)
NORASETTHEKUL SOMCHINTANA (US)
SHIM KYUHA (US)
LIAW LAUREN (US)
SHIMIZU TAKASKI (US)
SASAKI NOBUYUKI (US)
MUIRA RYUICHI (US)
ITO HIRO (US)
LIU TZU-YU (US)
AREVALO EDWIN (US)
MITTAL DEVEN (US)
NORASETTHEKUL SOMCHINTANA (US)
SHIM KYUHA (US)
LIAW LAUREN (US)
SHIMIZU TAKASKI (US)
SASAKI NOBUYUKI (US)
MUIRA RYUICHI (US)
ITO HIRO (US)
Application Number:
PCT/US2019/024878
Publication Date:
December 12, 2019
Filing Date:
March 29, 2019
Export Citation:
Assignee:
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC (US)
International Classes:
H01L21/768; H01L21/02; H01L21/033; H01L21/265
Foreign References:
| US20140273461A1 | 2014-09-18 | |||
| KR20050067451A | 2005-07-04 | |||
| US20150194317A1 | 2015-07-09 | |||
| JPH05275702A | 1993-10-22 | |||
| US20140256137A1 | 2014-09-11 |
Attorney, Agent or Firm:
CHAMBERLAIN, Jeffrey M. et al. (US)
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