Title:
TEMPLATE, METHOD OF MANUFACTURING SAME, AND METHOD OF MANUFACTURING A VERTICAL TYPE NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
Document Type and Number:
WIPO Patent Application WO/2012/093757
Kind Code:
A1
Abstract:
The present invention relates to a method of manufacturing a nitride semiconductor light-emitting device using a template. A method of manufacturing the template includes: a step of growing a first nitride layer containing group III materials on a substrate; a step of forming a plurality of barriers, each having an etch characteristic different from that of the first nitride layer on the first nitride layer; a step of etching the first nitride layer along patterns of the etch barriers using chloride-based gas to form a nanostructure having a pillar shape; and a step of growing a second nitride layer on the nanostructure to form a nitride buffer layer having a plurality of pores therein.
Inventors:
OH CHUNG-SEOK (KR)
JANG SUNG-HWAN (KR)
JUNG HO-IL (KR)
PARK CHI-KWON (KR)
PARK KUN (KR)
JANG SUNG-HWAN (KR)
JUNG HO-IL (KR)
PARK CHI-KWON (KR)
PARK KUN (KR)
Application Number:
PCT/KR2011/004062
Publication Date:
July 12, 2012
Filing Date:
June 03, 2011
Export Citation:
Assignee:
SEMIMATERIALS CO LTD (KR)
OH CHUNG-SEOK (KR)
JANG SUNG-HWAN (KR)
JUNG HO-IL (KR)
PARK CHI-KWON (KR)
PARK KUN (KR)
OH CHUNG-SEOK (KR)
JANG SUNG-HWAN (KR)
JUNG HO-IL (KR)
PARK CHI-KWON (KR)
PARK KUN (KR)
International Classes:
H01L33/12; H01L21/20; H01L33/22
Foreign References:
| KR20060135568A | 2006-12-29 | |||
| JP2010219269A | 2010-09-30 | |||
| KR20090069304A | 2009-06-30 | |||
| US20100032647A1 | 2010-02-11 | |||
| KR20030032965A | 2003-04-26 |
Attorney, Agent or Firm:
DAE-A INTERNATIONAL IP & LAW FIRM (KR)
특허법인 대아 (KR)
특허법인 대아 (KR)
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Claims: