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Patent Searching and Data


Title:
TERMINAL MATERIAL FOR CONNECTORS
Document Type and Number:
WIPO Patent Application WO/2021/065866
Kind Code:
A1
Abstract:
This terminal material has: a substrate in which at least the surface thereof is made of Cu or a Cu alloy; a Ni layer provided on the substrate and having a thickness of 0.1-1.0 µm; an Cu-Sn intermetallic compound layer provided on the Ni layer and having a thickness of 0.2-2.5 µm; and a Sn layer provided on the Cu-Sn intermetallic compound layer and having a thickness of 0.5-3.0 μm, wherein a boundary at which an orientation difference between adjacent pixels is 2° or more as analyzed in measurement steps of 0.1 µm by EBSD performed on the cross-sections of the Cu-Sn intermetallic compound layer and the Sn layer is assumed as a crystal grain boundary, the Cu-Sn intermetallic compound layer has an average crystal grain size Dc of 0.5 µm or more, and the grain size ratio Ds/Dc of the average crystal grain size Ds of the Sn layer and the average crystal grain size Dc is 5 or less.

Inventors:
MIYASHIMA, Naoki (Wakamatsu Plant 128-7, Ohgi-Machi, Aizuwakamatsu-sh, Fukushima 22, JP)
MAKI, Kazunari (Wakamatsu Plant 128-7, Ohgi-Machi, Aizuwakamatsu-sh, Fukushima 22, JP)
FUNAKI, Shinichi (Wakamatsu Plant 128-7, Ohgi-Machi, Aizuwakamatsu-sh, Fukushima 22, JP)
ISHIKAWA, Seiichi (Wakamatsu Plant 128-7, Ohgi-Machi, Aizuwakamatsu-sh, Fukushima 22, JP)
Application Number:
JP2020/036807
Publication Date:
April 08, 2021
Filing Date:
September 29, 2020
Export Citation:
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Assignee:
MITSUBISHI MATERIALS CORPORATION (Chiyoda-ku Tokyo, 17, JP)
International Classes:
C25D5/50; C22C9/00; C25D5/12; C25D7/00; H01R13/03
Attorney, Agent or Firm:
AOYAMA, Masakazu (3F Kisuke Shin-Chiyoda Bldg. 3-3-9, Kandakajicho, Chiyoda-k, Tokyo 45, JP)
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