Title:
TERNARY MEMORY CELL AND MEMORY DEVICE COMPRISING SAME
Document Type and Number:
WIPO Patent Application WO/2020/145555
Kind Code:
A1
Abstract:
A ternary memory cell in a memory device comprising the ternary memory cell can comprise: a first inverter and second inverter which are cross-connected at a first node and second node and comprise a pull-up device and pull-down device passing a constant current during turn-off; a first write transistor connected to the first node and a first bit line, respectively; a second write transistor connected to the second node and a second bit line, respectively; a first amplifier circuit which has an input terminal, connected to the first node, and an output terminal connected to the first bit line; and a second amplifier circuit which has an input terminal, connected to the second node, and an output terminal connected to the second bit line.
Inventors:
KIM KYUNG ROK (KR)
JEONG JAE WON (KR)
CHOI YOUNG EUN (KR)
JEONG JAE WON (KR)
CHOI YOUNG EUN (KR)
Application Number:
PCT/KR2019/018496
Publication Date:
July 16, 2020
Filing Date:
December 26, 2019
Export Citation:
Assignee:
ULSAN NAT INST SCIENCE & TECH UNIST (KR)
International Classes:
G11C11/419; G11C11/412
Domestic Patent References:
| WO2014105680A1 | 2014-07-03 |
Foreign References:
| US20050237810A1 | 2005-10-27 | |||
| KR101689159B1 | 2016-12-23 | |||
| US20050135134A1 | 2005-06-23 | |||
| US20080008020A1 | 2008-01-10 |
Attorney, Agent or Firm:
Y.P.LEE, MOCK & PARTNERS (KR)
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