THERMOELECTRIC ELEMENT AND THERMOELECTRIC DEVICE

Title:

THERMOELECTRIC ELEMENT AND THERMOELECTRIC DEVICE

Document Type and Number:

WIPO Patent Application WO/2022/045249

Kind Code:

A1

Abstract:

Provided are a thermoelectric element and a thermoelectric device that utilize the Ettingshausen effect and have high energy efficiency. The thermoelectric element 104 comprises a metalloid or a semiconductor having a bandgap of less than or equal to 0.5 eV, wherein, when a current I flows in one direction and a magnetic field H is applied in a direction orthogonal to the current I, a temperature gradient (Tc to Th) is generated in a direction orthogonal to both the current I and the magnetic field H. The thermoelectric device is provided with a plurality of thermoelectric elements 104 each having a shape extending in one direction, wherein the plurality of thermoelectric elements 104 are disposed on a substrate 102 so that the longitudinal directions of the plurality of thermoelectric elements 104 are parallel to each other.

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Inventors:

NAKATSUJI SATORU (JP)
SAKAI AKITO (JP)

Application Number:

PCT/JP2021/031369

Publication Date:

March 03, 2022

Filing Date:

August 26, 2021

Export Citation:

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Assignee:

UNIV TOKYO (JP)

International Classes:

H01L37/04; H01L27/22; H02N11/00

Foreign References:

JPS63257282A	1988-10-25
JP2017084854A	2017-05-18
JPS63315924A	1988-12-23