Title:
THIN FILM-FORMING FEEDSTOCK FOR USE IN ATOMIC LAYER DEPOSITION, THIN FILM, METHOD FOR PRODUCING THIN FILM, AND RUTHENIUM COMPOUND
Document Type and Number:
WIPO Patent Application WO/2022/220153
Kind Code:
A1
Abstract:
Provided is a thin film-forming feedstock, for use in atomic layer deposition, that contains a ruthenium compound represented by general formula (1) below. (In formula (1), R1, R2, R3, R4, R5, and R6 each independently represent a hydrogen atom, an alkyl group having 1-4 carbon atoms, or a fluorine atom-containing alkyl group having 1-4 carbon atoms, wherein each of the plurality constituted of R1, R2, R3, R4, R5, and R6 may be the same or different.)
Inventors:
HATASE MASAKO (JP)
ENZU MASAKI (JP)
FUSE WAKANA (JP)
FUKUSHIMA RYOTA (JP)
ENZU MASAKI (JP)
FUSE WAKANA (JP)
FUKUSHIMA RYOTA (JP)
Application Number:
PCT/JP2022/016488
Publication Date:
October 20, 2022
Filing Date:
March 31, 2022
Export Citation:
Assignee:
ADEKA CORP (JP)
International Classes:
C23C16/455; C07C215/08; C07F15/00; C23C16/16; C23C16/18
Domestic Patent References:
| WO2019097768A1 | 2019-05-23 | |||
| WO2010071364A2 | 2010-06-24 | |||
| WO2006049059A1 | 2006-05-11 |
Foreign References:
| JP6509128B2 | 2019-05-08 | |||
| JP2009001896A | 2009-01-08 |
Other References:
LAI Y-H, ET AL: "Synthesis and characterization of ruthenium complexes with two fluorinated amino alkoxide chelates. The quest to design suitable MOCVD source reagents", CHEMISTRY OF MATERIALS, AMERICAN CHEMICAL SOCIETY, US, vol. 15, no. 12, 17 June 2003 (2003-06-17), US , pages 2454 - 2462, XP002330472, ISSN: 0897-4756, DOI: 10.1021/cm030029c
Attorney, Agent or Firm:
SOGA, Michiharu et al. (JP)
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