Title:
THIN FILM FORMING METHOD EMPLOYING INTERFACE-NITRIDING TECHNIQUE USING HIGH-DENSITY RADICALS
Document Type and Number:
WIPO Patent Application WO/2024/071573
Kind Code:
A1
Abstract:
A method for forming an oxide film by using a deposition apparatus, according to an embodiment of the present invention, comprises the steps of: (a) depositing a first thin film composed of a nitride film on a substrate; (b) spraying OH radicals onto the first thin film to oxidize the first thin film, thereby forming an oxynitride film in the first thin film; and (c) forming an insulating film on the first thin film, wherein steps (a) and (b) are selectively repeated to adjust any one of the thickness of the first thin film or the concentration of N inside the first thin film.
Inventors:
SHIN DONG HWA (KR)
KIM YONG WEON (KR)
KIM YONG WEON (KR)
Application Number:
PCT/KR2023/008426
Publication Date:
April 04, 2024
Filing Date:
June 19, 2023
Export Citation:
Assignee:
EQ TECH PLUS CO LTD (KR)
International Classes:
H01L21/02; H01L21/28
Foreign References:
| KR20130030213A | 2013-03-26 | |||
| KR20220085674A | 2022-06-22 | |||
| KR20090014658A | 2009-02-11 | |||
| KR20220085673A | 2022-06-22 | |||
| KR20220068484A | 2022-05-26 |
Attorney, Agent or Firm:
MAPS INTELLECTUAL PROPERTY LAW FIRM (KR)
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