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Patent Searching and Data


Title:
THIN-FILM PHOTOELECTRIC CONVERSION DEVICE
Document Type and Number:
WIPO Patent Application WO/2008/059857
Kind Code:
A1
Abstract:
This invention provides a thin-film photoelectric conversion device having a high level of conversion efficiency, comprising a transparent electroconductive film, a photoelectric conversion unit, a transparent electrode layer, and a high-reflectance electrode layer. The thin-film photoelectric conversion device comprises a light transparent insulating substrate located on a light incident side and the following elements stacked on the light transparent insulating substrate in the following order from the light incident side: a transparent electroconductive film, at least one photoelectric conversion unit, a transparent electrode layer, and a high-reflectance electrode layer. The thin-film photoelectric conversion device is characterized in that the transparent electrode layer has a two-layer structure comprising a first electrode layer stacked on the photoelectric conversion unit and having an in-layer hydrogen content of not less than 5 atomic% and not more than 50 atomic%, and a second electrode layer stacked on the first electrode layer and having an in-layer hydrogen content of not less than 0 atomic% and less than 5 atomic%. The thin-film photoelectric conversion device is further characterized in that the first electrode layer is formed of zinc oxide provided by chemical vapor deposition.

Inventors:
FUKUDA SUSUMU (JP)
TAWADA YUKO (JP)
Application Number:
PCT/JP2007/072070
Publication Date:
May 22, 2008
Filing Date:
November 14, 2007
Export Citation:
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Assignee:
KANEKA CORP (JP)
FUKUDA SUSUMU (JP)
TAWADA YUKO (JP)
International Classes:
H01L31/04; C23C14/08; C23C16/40; H01L21/205; H01L31/0224
Foreign References:
JP2000261011A2000-09-22
JPS627123A1987-01-14
JPH11284211A1999-10-15
JPS628578A1987-01-16
JP2000150934A2000-05-30
JP2003264307A2003-09-19
JP2005197608A2005-07-21
Attorney, Agent or Firm:
KANEKA CORPORATION (Kita-ku Osaka-sh, Osaka 88, JP)
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