THIN FILM PIEZOELECTRIC OSCILLATOR, THIN FILM PIEZOELECTRIC DEVICE, AND MANUFACTURING METHOD THEREOF

Title:

THIN FILM PIEZOELECTRIC OSCILLATOR, THIN FILM PIEZOELECTRIC DEVICE, AND MANUFACTURING METHOD THEREOF

Document Type and Number:

WIPO Patent Application WO/2004/001964

Kind Code:

A1

Abstract:

A thin film piezoelectric device includes a substrate (12) having a via hole (22) and a piezoelectric laminated structure (14) consisting of a lower electrode (15), a piezoelectric film (16), and an upper electrode (17) formed on the substrate (12) via an insulation layer (13). A plurality of thin film piezoelectric oscillators (210, 220) are formed for the via hole (22). The piezoelectric laminated structure (14) includes a diaphragm (23) located to face the via hole (22) and a support area other than it. The thin film piezoelectric oscillators (210, 220) are electrically connected by the lower electrode (15). When the straight line in the substrate plane passing through the centers (1, 2) of the diaphragm (23) of the thin film piezoelectric oscillators (210, 220) has the length D1 of the segment passing through the support area and the distance between the centers of the diaphragms of the thin film piezoelectric oscillators (210, 220) is D0, the ratio D1/D0 is 0.1 to 0.5. The via hole (22) is formed by the deep graving type reactive ion etching method.

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Inventors:

YAMADA TETSUO (JP)
NISHIMURA KOSUKE (JP)
NAGAO KEIGO (JP)

Application Number:

PCT/JP2003/007857

Publication Date:

December 31, 2003

Filing Date:

June 20, 2003

Export Citation:

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Assignee:

UBE INDUSTRIES (JP)
YAMADA TETSUO (JP)
NISHIMURA KOSUKE (JP)
NAGAO KEIGO (JP)

International Classes:

H01L41/22; H01L41/29; H03H3/02; H03H9/02; H03H9/56; H03H9/58; (IPC1-7): H03H9/17; H03H3/02; H03H9/54; H03H9/58; H01L41/08; H01L41/22

Foreign References:

JP2000307376A	2000-11-02
JP2003133892A	2003-05-09
JP2002353760A	2002-12-06
JP2001203558A	2001-07-27
JP2000332568A	2000-11-30
JP2002076823A	2002-03-15

Other References: