THIN-FILM SEMICONDUCTOR DEVICE FOR DISPLAY DEVICE, METHOD FOR PRODUCING THIN-FILM SEMICONDUCTOR DEVICE FOR DISPLAY DEVICE, EL DISPLAY PANEL AND EL DISPLAY DEVICE

WIPO Patent Application WO/2012/042564

A1

This thin-film semiconductor device (2) for display devices is provided with: a first gate electrode (310G) formed on a substrate; a gate insulating film (330) formed on the first gate electrode; a semiconductor layer (311) formed above the first gate electrode; a first source electrode (310S) formed above the semiconductor layer; a second drain electrode (320D) formed in the same layer as the first source electrode; a first interlayer insulating film (340) formed so as to cover the first source electrode and the second drain electrode; a gate wiring (21) positioned on the first interlayer insulating film; and a power wiring (23) positioned in parallel to the gate wiring and in the same layer as the gate wiring. Furthermore, the first gate electrode and the gate wiring are electrically connected by a first contact part (111), and the second drain electrode and the power wiring are electrically connected by a second contact part (112).

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KANEGAE ARINOBU

PCT/JP2010/005845

April 05, 2012

September 29, 2010

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PANASONIC CORP (JP)
KANEGAE ARINOBU

G02F1/1343; G09F9/30; G02F1/1368; G09F9/00; H01L29/78; H05B33/14

JP2002014628A	2002-01-18
JP2010079043A	2010-04-08
JP2000357799A	2000-12-26

NII, Hiromori (JP)
New house Extensive 守 (JP)

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