THIN FILM TRANSISTOR, TRANSISTOR ARRAY SUBSTRATE, AND METHOD FOR MANUFACTURING TRANSISTOR ARRAY SUBSTRATE

WIPO Patent Application WO/2024/075923

A1

A thin film transistor, a transistor array substrate comprising same, and a method for manufacturing the transistor array substrate, are provided. The thin film transistor comprises: a substrate; an active layer disposed on the substrate and including a channel region, a source region connected to one side of the channel region, and a drain region connected to the other side of the channel region; a gate insulating layer disposed on a portion of the active layer; a gate electrode formed of an electrode conductive layer on the gate insulating layer and overlapping the channel region of the active layer; a source electrode formed of the electrode conductive layer, extending into the source region of the active layer, and contacting a portion of the source region; and a drain electrode formed of the electrode conductive layer, extending into the drain region of the active layer, and contacting a portion of the drain region. The active layer is formed of an oxide semiconductor including crystals formed by heat treatment, and is disposed in the form of an intact plane.

MOON SUNG GWON (KR)
KANG DONG HAN (KR)
KIM JEE HOON (KR)
SON SEUNG SOK (KR)
YANG SHIN HYUK (KR)
LEE WOO GEUN (KR)

PCT/KR2023/007675

April 11, 2024

June 05, 2023

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SAMSUNG DISPLAY CO LTD (KR)

H01L29/786; H01L29/49; H01L29/66; H10K59/121; H10K59/131

KR20090072099A	2009-07-02
KR20210126187A	2021-10-20
KR20060062139A	2006-06-12
KR20020096743A	2002-12-31
KR100488958B1	2005-05-11

KASAN IP & LAW FIRM (KR)

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