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Title:
THIN FILM TRANSISTOR, DISPLAY PANEL AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/044950
Kind Code:
A1
Abstract:
Disclosed in the embodiments of the present application are a thin film transistor, a display panel and a preparation method therefor. The thin film transistor comprises a gate, a gate insulation layer, an active layer, a first electrode, an interlayer insulation layer and a second electrode, wherein the interlayer insulation layer is disposed between the first electrode and the active layer; a first via hole is provided on the interlayer insulation layer; the active layer is connected to the first electrode by means of the first via hole; the thickness of the interlayer insulation layer is greater than the thickness of the gate insulation layer; and the second electrode is connected to the active layer.

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Inventors:
LU MACAI (CN)
LIU MINGGANG (CN)
LIU NIAN (CN)
Application Number:
PCT/CN2021/121819
Publication Date:
March 30, 2023
Filing Date:
September 29, 2021
Export Citation:
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Assignee:
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD (CN)
International Classes:
H01L27/12; G02F1/1362; G02F1/1368
Foreign References:
CN113345837A2021-09-03
US20170294464A12017-10-12
CN111682033A2020-09-18
CN112490254A2021-03-12
US20200096799A12020-03-26
Attorney, Agent or Firm:
PURPLEVINE INTELLECTUAL PROPERTY (SHENZHEN) CO., LTD. (CN)
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