Title:
THIN FILM TRANSISTOR, GATE DRIVER CIRCUIT AND DISPLAY APPARATUS
Document Type and Number:
WIPO Patent Application WO/2020/062871
Kind Code:
A1
Abstract:
A thin film transistor may include a substrate, a source electrode (103) on the substrate, a drain electrode (104) on the substrate, a gate (101) on the substrate, and an active layer (102) on the substrate. The source electrode (103) may include a first teeth portion. The drain electrode (104) may include a second teeth portion. The gate (101) may include a third teeth portion. The active layer (102) may include a plurality of channel regions. The first teeth portion, the second teeth portion, the third teeth portion, and the active layer (102) form a plurality of sub-thin film transistors (T1, T2, T3, T4, T5) connected in parallel. The center sub-thin film transistor (T3) has a channel region having a smallest width-to-length ratio (W3/L3) among the plurality of sub-thin film transistors (T1, T2, T3, T4, T5).
Inventors:
LIU FENGJUAN (CN)
HAN YING (CN)
HAN YING (CN)
Application Number:
PCT/CN2019/085710
Publication Date:
April 02, 2020
Filing Date:
May 06, 2019
Export Citation:
Assignee:
BOE TECHNOLOGY GROUP CO LTD (CN)
International Classes:
H01L27/12
Foreign References:
| CN109309100A | 2019-02-05 | |||
| CN104091830A | 2014-10-08 | |||
| CN106531745A | 2017-03-22 | |||
| CN203134808U | 2013-08-14 | |||
| US20040135175A1 | 2004-07-15 |
Attorney, Agent or Firm:
TEE&HOWE INTELLECTUAL PROPERTY ATTORNEYS (CN)
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