Title:
THIN-FILM TRANSISTOR, MANUFACTURING METHOD THEREFOR, ARRAY SUBSTRATE, AND DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/019654
Kind Code:
A1
Abstract:
A thin-film transistor, a manufacturing method therefor, an array substrate, and a display device. The manufacturing method for the thin film transistor comprises formation of a gate electrode (2), a gate insulating layer (3), an active region (4), a source electrode (5), and a drain electrode (6) on a substrate base board (1), where the active region (4) is formed by using a ZnON material, and the active region (4) is implanted with nitrogen ions while the active region (4) is being formed, thus allowing the subthreshold swing of the thin-film transistor to be ≤ 0.5 mV/dec. The manufacturing method reduces the subthreshold swing of the thin-film transistor and enhances the semiconductor properties of the thin-film transistor.
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Inventors:
JIANG CHUNSHENG (CN)
HSIN LUNG PAO (CN)
HSIN LUNG PAO (CN)
Application Number:
PCT/CN2014/091912
Publication Date:
February 11, 2016
Filing Date:
November 21, 2014
Export Citation:
Assignee:
BOE TECHNOLOGY GROUP CO LTD (CN)
International Classes:
H01L21/425; H01L27/12; H01L29/786
Foreign References:
| US5581092A | 1996-12-03 | |||
| CN103855194A | 2014-06-11 | |||
| JP2007311453A | 2007-11-29 |
Attorney, Agent or Firm:
LIU, SHEN & ASSOCIATES (CN)
北京市柳沈律师事务所 (CN)
北京市柳沈律师事务所 (CN)
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