Title:
THIN FILM TRANSISTOR AND MANUFACTURING METHOD, ARRAY SUBSTRATE AND DISPLAY DEVICE THEREOF
Document Type and Number:
WIPO Patent Application WO/2016/165511
Kind Code:
A1
Abstract:
Provided are a thin film transistor (TFT) and a manufacturing method, array substrate and display apparatus thereof. The TFT manufacturing method comprises: forming a source electrode (3) and a drain electrode (4) of the TFT; forming, on the source electrode (3) and the drain electrode (4), a metal layer (5) capable of undergoing an oxidation reaction with oxygen ions of a metal nitrogen oxide semiconductor layer (6); forming the metal nitrogen oxide semiconductor layer (6) on the metal layer (5), or on the source electrode (3), the drain electrode (4) and the metal layer (5). The present invention can form a favorable ohmic contact and avoid reducing a subthreshold swing(SS) performance of the TFT.
Inventors:
HSIN LUNGPAO (CN)
FANG JINGANG (CN)
FANG JINGANG (CN)
Application Number:
PCT/CN2016/076232
Publication Date:
October 20, 2016
Filing Date:
March 14, 2016
Export Citation:
Assignee:
BOE TECHNOLOGY GROUP CO LTD (CN)
International Classes:
H01L29/786
Foreign References:
| US20140339536A1 | 2014-11-20 | |||
| EP2738815A1 | 2014-06-04 | |||
| CN1534361A | 2004-10-06 | |||
| US20110102700A1 | 2011-05-05 | |||
| US20110070691A1 | 2011-03-24 | |||
| CN104795449A | 2015-07-22 |
Attorney, Agent or Firm:
DRAGON INTELLECTUAL PROPERTY LAW FIRM (CN)
北京银龙知识产权代理有限公司 (CN)
北京银龙知识产权代理有限公司 (CN)
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