Title:
THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2020/224013
Kind Code:
A1
Abstract:
Disclosed are a thin-film transistor and a manufacturing method therefor. The manufacturing method comprises forming a gate electrode layer, an insulating layer, an amorphous silicon layer, a metal layer, a copper conductor layer and a photoresist layer on a base substrate. Before the manufacturing of an active layer, dry etching is carried out on the photoresist layer to form a channel with the copper conductor layer at the bottom, and at the same time, an edge of the photoresist layer is cut so as to align with an edge of the metal layer to prevent the photoresist layer from hindering the etching of the active layer by means of etching gas, thus improving the aperture ratio and the yield of the thin-film transistor. An oxidation protection layer is formed at the channel to prevent the copper conductor layer from reacting with the etching gas to form a compound, such that a clean channel can be subsequently obtained, improving the yield of the thin-film transistor.
Inventors:
TAN ZHIWEI (CN)
Application Number:
PCT/CN2019/088513
Publication Date:
November 12, 2020
Filing Date:
May 27, 2019
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECT (CN)
International Classes:
H01L21/336; H01L29/786
Foreign References:
| CN107112363A | 2017-08-29 | |||
| CN108198756A | 2018-06-22 | |||
| CN107768307A | 2018-03-06 | |||
| CN104766859A | 2015-07-08 | |||
| US5340758A | 1994-08-23 |
Attorney, Agent or Firm:
ESSEN PATENT & TRADEMARK AGENCY (CN)
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