Title:
THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/177157
Kind Code:
A1
Abstract:
The present invention relates to a thin film transistor and a manufacturing method therefor, and, more specifically, to a thin film transistor having improved characteristics and a manufacturing method therefor. The thin film transistor according to an embodiment of the present invention comprises: a gate electrode; an active layer arranged to be vertically spaced from the gate electrode; source and drain electrodes arranged on the active layer so as to be spaced from each other; and a contact layer formed between the active layer and the source and drain electrodes.
Inventors:
PARK IL HOUNG (KR)
CHO SEUNG HYUN (KR)
YEO YUN GU (KR)
OH WON JU (KR)
LEE DONG HWAN (KR)
LEE JUN SEOK (KR)
HEO JEONG (KR)
CHO SEUNG HYUN (KR)
YEO YUN GU (KR)
OH WON JU (KR)
LEE DONG HWAN (KR)
LEE JUN SEOK (KR)
HEO JEONG (KR)
Application Number:
PCT/KR2023/003298
Publication Date:
September 21, 2023
Filing Date:
March 10, 2023
Export Citation:
Assignee:
JUSUNG ENG CO LTD (KR)
International Classes:
H01L29/786; H01L29/66
Foreign References:
| KR20150101487A | 2015-09-04 | |||
| KR100882677B1 | 2009-02-06 | |||
| KR20110105542A | 2011-09-27 | |||
| US20100006833A1 | 2010-01-14 | |||
| KR20170074267A | 2017-06-30 |
Attorney, Agent or Firm:
NAM, Seung-Hee (KR)
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