Title:
THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/085528
Kind Code:
A1
Abstract:
The present invention relates to a thin-film transistor and a manufacturing method therefor. The thin film transistor comprises: a gate electrode; an active layer spaced apart from the gate electrode; a source electrode provided on one side of the active layer; a drain electrode provided on the other side of the active layer; and a contact layer provided in at least one between the active layer and the source electrode and between the active layer and the drain electrode. The contact layer includes a first metal oxide of at least one selected from Zn, In, and Ga.
Inventors:
PARK IL HOUNG (KR)
Application Number:
PCT/KR2023/015700
Publication Date:
April 25, 2024
Filing Date:
October 12, 2023
Export Citation:
Assignee:
JUSUNG ENG CO LTD (KR)
International Classes:
H01L29/786; H01L29/66
Attorney, Agent or Firm:
ASTRAN INT`L IP GROUP (KR)
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