Title:
THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2010/044332
Kind Code:
A1
Abstract:
A thin-film transistor which has excellent mobility and on/off ratio and in which a shift in the threshold of a gate voltage due to repetition does not occur is manufactured by a convenient and highly productive method. A method of manufacturing the thin-film transistor provided with a gate electrode, a gate insulating layer, a source electrode and a drain electrode, and a semiconductor layer on a substrate is characterized in that the semiconductor layer consists of a film formed in a coating process using the precursor of an oxide semiconductor and the gate insulating layer is formed from the coating process.
Inventors:
TAKEMURA CHIYOKO (JP)
HONDA MAKOTO (JP)
OBUCHI REIKO (JP)
HIRAI KATSURA (JP)
HONDA MAKOTO (JP)
OBUCHI REIKO (JP)
HIRAI KATSURA (JP)
Application Number:
PCT/JP2009/066498
Publication Date:
April 22, 2010
Filing Date:
September 24, 2009
Export Citation:
Assignee:
KONICA MINOLTA HOLDINGS INC (JP)
TAKEMURA CHIYOKO (JP)
HONDA MAKOTO (JP)
OBUCHI REIKO (JP)
HIRAI KATSURA (JP)
TAKEMURA CHIYOKO (JP)
HONDA MAKOTO (JP)
OBUCHI REIKO (JP)
HIRAI KATSURA (JP)
International Classes:
H01L21/336; H01L29/786
Foreign References:
| JP2007042689A | 2007-02-15 | |||
| JP2000123658A | 2000-04-28 | |||
| JP2005093700A | 2005-04-07 |
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